Advantages of SiGe-HBTs for RF wireless communication

Author

Senapati, B. ; Maiti, C.K.

Author_Institution

Dept. of Electron. & Electr. Commun. Eng., Indian Inst. of Technol., Kharagpur, India

fYear

2000

fDate

2000

Firstpage

9

Lastpage

13

Abstract

State-of-the-art RF wireless communication systems require high level of integration, low-cost and high performance. The suitability of Si/SiGe heterostructure based devices and circuits is examined in this paper. Issues related to the choice of technology for RFICs are considered and it has been shown that scaled SiGe-HBTs satisfy most of the requirements such as gain, f_t and noise figure. Results of the simulation for RF performances of SiGe-HBT devices are presented. Different components of total transit time (τ_ec) have been extracted using the charge partitioning method. Passive components available in SiGe-BiCMOS technology demonstrate the feasibility of realizing SiGe-MMICs

Keywords

Ge-Si alloys; bipolar MMIC; heterojunction bipolar transistors; semiconductor device models; MMIC; RF wireless communication; RFIC; Si-SiGe; Si/SiGe heterostructures; SiGe-HBT; charge partitioning method; heterojunction bipolar transistors; high integration level; high performance; low-cost; radiofrequency integrated circuits; total transit time; BiCMOS integrated circuits; Costs; Gallium arsenide; Germanium silicon alloys; Integrated circuit technology; Performance gain; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Personal Wireless Communications, 2000 IEEE International Conference on

Conference_Location

Hyderabad

Print_ISBN

0-7803-5893-7

Type

conf

DOI

10.1109/ICPWC.2000.905763

Filename

905763