• DocumentCode
    2904980
  • Title

    Insulation Degradation and Bias Acceleration Effect Study under THB Test

  • Author

    Zhou, Jianwei ; Zheng, Wei ; Lou, Minyi ; Lee, Taekoo

  • Author_Institution
    Samsung Semicond. China R&D Co. Ltd., Suzhou
  • fYear
    2007
  • fDate
    14-17 Aug. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    It is well known that temperature humidity bias (THB) test is widely used to evaluate the moisture resistance of non-hermetic packages in semiconductor industry. The high humidity environment, high temperature and bias will reveal potential defects of package material and potential design problem that is hard to be detected at normal condition. In tins paper, a double daisy chain structure substrate was designed to make the subsequent measurement more convenient. The insulation property degradation due to THB test was evaluated. The insulation property of dielectric material would get degradation with THB test time. But even the degraded resistance after 1100 h THB test was still high enough to prevent dielectric failure occurring internal to the substrate. The acceleration effect of bias on THB test was studied. Increasing bias would greatly accelerate the THB test and shorten the test time. The acceleration factor of different bias was analyzed.
  • Keywords
    ball grid arrays; dielectric materials; humidity; insulation testing; moisture; bias acceleration effect; dielectric failure; dielectric material; double daisy chain structure; insulation degradation; moisture resistance; package defects; semiconductor industry; temperature humidity bias test; time 1100 h; Degradation; Dielectric materials; Dielectric substrates; Dielectrics and electrical insulation; Humidity; Insulation testing; Life estimation; Semiconductor device packaging; Semiconductor device testing; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-1392-8
  • Electronic_ISBN
    978-1-4244-1392-8
  • Type

    conf

  • DOI
    10.1109/ICEPT.2007.4441501
  • Filename
    4441501