Quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs

Author

Maosen, Wang ; Lirong, Niu ; Shuyong, Yu ; Jun, Liu ; Dongjin, Yao

Author_Institution

Electron. Devices Inst., Nanjing, China

fYear

1996

fDate

12-15 Aug 1996

Firstpage

62

Lastpage

65

Abstract

Quasi-monolithic Ka-band voltage control oscillators (VCOs) have been developed based on 0.2 μm pseudomorphic AlGaAs/InGaAs/GaAs low noise HEMT technology. The designed VCO incorporates a PM HEMT, a Schottky diode, matching network and bias circuit. An output power of 10 mW at 26 GHz was obtained. A frequency of 26.86 GHz with 340 MHz of tuning bandwidth and 37 GHz with 160 MHz of tuning bandwidth have been measured. The chip size is 2.5 mm×3.5 mm. This is the first report of a quasi-monolithic Ka-band VCOs using pseudomorphic AlGaAs/InGaAs/GaAs HEMTs in China

Keywords

HEMT circuits; HEMT integrated circuits; III-V semiconductors; MMIC oscillators; aluminium compounds; circuit tuning; field effect MIMIC; gallium arsenide; hybrid integrated circuits; indium compounds; millimetre wave integrated circuits; millimetre wave oscillators; varactors; voltage-controlled oscillators; 0.2 micron; 10 mW; 160 to 340 MHz; 26 to 37 GHz; AlGaAs-InGaAs-GaAs; EHF; Ka-band; PM HEMT; Schottky diode; bias circuit; low noise PHEMT technology; matching network; pseudomorphic HEMTs; quasi-monolithic VCOs; tuning bandwidth; voltage control oscillators; Bandwidth; Circuit noise; Circuit optimization; Gallium arsenide; HEMTs; Indium gallium arsenide; Schottky diodes; Tuning; Voltage control; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on

Conference_Location

Beijing

Print_ISBN

0-7803-3619-4

Type

conf

DOI

10.1109/ICMWFT.1996.574715

Filename

574715