Title :
Development of GaAs pseudomorphic HEMTs at W-band
Author :
Guoliang, Zhu ; Mingwen, Yuan ; Chenhui, Liu ; Wei, Qiu ; Huijun, Nie
Author_Institution :
Hebei Semicond. Res. Inst., Shijiazhuang, China
Abstract :
The development of GaAs pseudomorphic HEMTs (PHEMTs) at W-band without using electron beam direct writing is described and the obtained results are reported. The maximum oscillation frequency for the developed device is over 150 GHz. This is the first GaAs PHEMT at W-band fabricated by the conventional UV photolithographic technique
Keywords :
III-V semiconductors; equivalent circuits; gallium arsenide; high electron mobility transistors; millimetre wave field effect transistors; photolithography; semiconductor device models; 150 GHz; EHF; GaAs; GaAs PHEMT; MM-wave device; T-gate type; UV photolithographic technique; W-band; pseudomorphic HEMTs; Electron beams; Frequency; Gallium arsenide; HEMTs; Heterojunctions; Molecular beam epitaxial growth; Noise figure; PHEMTs; Temperature; Writing;
Conference_Titel :
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3619-4
DOI :
10.1109/ICMWFT.1996.574718
