DocumentCode
2905094
Title
Induced intracenter optical transitions in compressed p-Ge
Author
Altukhov, I.V. ; Chirkova, E.G. ; Kagan, M.S. ; Korolev, K.A. ; Sinis, V.P. ; Yassievi, I.N.
Author_Institution
Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, Russia
fYear
1996
fDate
12-15 Aug 1996
Firstpage
70
Lastpage
73
Abstract
The authors show that the induced far-infrared emission in uniaxially compressed p-Ge is due to the population inversion of strain-split acceptor levels as one of them is in the valence band. The possibility of a strong frequency tuning by stress is also shown
Keywords
elemental semiconductors; germanium; impurity states; piezo-optical effects; population inversion; stimulated emission; valence bands; Ge; compressed p-Ge; induced far-infrared emission; induced intracenter optical transitions; population inversion; strain-split acceptor levels; stress; strong frequency tuning; uniaxially compressed p-Ge; valence band; Capacitive sensors; Crystallography; Energy states; Gratings; Impurities; Optical resonators; Resonance; Stationary state; Stress; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3619-4
Type
conf
DOI
10.1109/ICMWFT.1996.574719
Filename
574719
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