Title :
Induced intracenter optical transitions in compressed p-Ge
Author :
Altukhov, I.V. ; Chirkova, E.G. ; Kagan, M.S. ; Korolev, K.A. ; Sinis, V.P. ; Yassievi, I.N.
Author_Institution :
Inst. of Radio Eng. & Electron., Acad. of Sci., Moscow, Russia
Abstract :
The authors show that the induced far-infrared emission in uniaxially compressed p-Ge is due to the population inversion of strain-split acceptor levels as one of them is in the valence band. The possibility of a strong frequency tuning by stress is also shown
Keywords :
elemental semiconductors; germanium; impurity states; piezo-optical effects; population inversion; stimulated emission; valence bands; Ge; compressed p-Ge; induced far-infrared emission; induced intracenter optical transitions; population inversion; strain-split acceptor levels; stress; strong frequency tuning; uniaxially compressed p-Ge; valence band; Capacitive sensors; Crystallography; Energy states; Gratings; Impurities; Optical resonators; Resonance; Stationary state; Stress; Uniaxial strain;
Conference_Titel :
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location :
Beijing
Print_ISBN :
0-7803-3619-4
DOI :
10.1109/ICMWFT.1996.574719
