Title :
Gate bias dependence of single event charge collection in AlSb/InAs HEMTs
Author :
DasGupta, S. ; McMorrow, D. ; Reed, R.A. ; Schrimpf, R.D. ; Boos, J. Brad
Author_Institution :
Electr. Eng. & Comput. Sci. Dept., Vanderbilt Univ., Nashville, TN, USA
Abstract :
Single event charge collection in AlSb/InAs HEMTs is shown to depend on the gate bias. Spatial correlation between excess channel carriers and the horizontal field is shown to be the key factor. Hole accumulation in the AlSb buffer layer increases the electron concentration in the two-dimensional electron gas, increasing the collected charge.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; two-dimensional electron gas; AlSb-InAs; HEMT; electron concentration; gate bias dependence; hole accumulation; horizontal field; single event charge collection; spatial correlation; two-dimensional electron gas; AlSb/InAs; Charge Ccllection; HEMT; Single Event; TCAD;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994575
