DocumentCode :
2905157
Title :
Realization of compact low-power ripple-flash A/D converter architectures using conventional digital CMOS technology
Author :
Baumgartner, Renato ; Leblebici, Yusuf
Author_Institution :
RF Integration Inc., Lowell, MA, USA
fYear :
2002
fDate :
25-28 Sept. 2002
Firstpage :
71
Lastpage :
74
Abstract :
In this paper, we present a generalized approach for the construction of ripple-flash ADC architectures that consist of cascade-connected capacitive threshold gates, realized using conventional CMOS technology. The main advantages of the proposed ADC architecture are the very small layout area, simple operation, high input-to-output response speed, and very low power dissipation. A new differential output voltage comparator is presented to ensure high precision and low propagation delay times. Several different ADC implementations are explored, including 4-bit, 5-bit and 6-bit ripple-flash circuit that demonstrate highly accurate DC transfer characteristics with INL errors smaller than 0.1 LSB, and near-ideal SNR levels for sampling frequencies of up to 50 MHz. Test circuits manufactured with 0.8 μm CMOS technology have shown that sampling rates in excess of 50 MHz are possible with this approach, while the silicon area and the power dissipation of the tested ADC circuits remain at least one order of magnitude smaller than those of similar flash ADCs built with the conventional approach.
Keywords :
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); delays; low-power electronics; threshold logic; 0.8 micron; 4 to 6 bit; 50 MHz; DC transfer characteristics; INL errors; cascade-connected capacitive threshold gates; differential output voltage comparator; digital CMOS technology; input-to-output response speed; layout area; low-power ripple-flash A/D converter architectures; near-ideal SNR levels; power dissipation; precision; propagation delay times; sampling frequencies; sampling rates; CMOS technology; Circuit simulation; Circuit testing; Clocks; Logic gates; Power dissipation; Propagation delay; Sampling methods; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC/SOC Conference, 2002. 15th Annual IEEE International
Print_ISBN :
0-7803-7494-0
Type :
conf
DOI :
10.1109/ASIC.2002.1158033
Filename :
1158033
Link To Document :
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