Development of a new methodology to model the synergistic effects between TID and ASETs

Author

Roche, Nicolas J-H ; Dusseau, L. ; Boch, J. ; Velo, Y. Gonzalez ; Vaillé, J-R ; Saigné, F. ; Auriel, G. ; Azais, B. ; Buchner, S.P. ; Marec, R. ; Calvel, P. ; Bezerra, F.

Author_Institution

IES, Univ. Montpellier II, Montpellier, France

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

171

Lastpage

178

Abstract

A high level model is developed using circuit analysis to predict the synergy effect observed on a three stages operational amplifier. This model makes possible to explain and to predict the ASETs propagation in circuitry. The effect of total ionizing dose is taken into account by varying the model parameters using the monitoring of the usual supply current induced degradation of the operational amplifier.

Keywords

integrated circuit reliability; operational amplifiers; radiation hardening (electronics); ASET; TID; analog single event transient; circuit analysis; high level model; operational amplifier; synergistic effect; total ionizing dose; Analytical models; Equations; Integrated circuit modeling; Mathematical model; Shape; Transistors; Voltage measurement; Analog integrated circuits; Bipolar circuits; Integrated circuit modeling; Ionizing Dose; Single Event Transient; Transient propagation; Transient response;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994576

Filename

5994576