Title :
Development of a new methodology to model the synergistic effects between TID and ASETs
Author :
Roche, Nicolas J-H ; Dusseau, L. ; Boch, J. ; Velo, Y. Gonzalez ; Vaillé, J-R ; Saigné, F. ; Auriel, G. ; Azais, B. ; Buchner, S.P. ; Marec, R. ; Calvel, P. ; Bezerra, F.
Author_Institution :
IES, Univ. Montpellier II, Montpellier, France
Abstract :
A high level model is developed using circuit analysis to predict the synergy effect observed on a three stages operational amplifier. This model makes possible to explain and to predict the ASETs propagation in circuitry. The effect of total ionizing dose is taken into account by varying the model parameters using the monitoring of the usual supply current induced degradation of the operational amplifier.
Keywords :
integrated circuit reliability; operational amplifiers; radiation hardening (electronics); ASET; TID; analog single event transient; circuit analysis; high level model; operational amplifier; synergistic effect; total ionizing dose; Analytical models; Equations; Integrated circuit modeling; Mathematical model; Shape; Transistors; Voltage measurement; Analog integrated circuits; Bipolar circuits; Integrated circuit modeling; Ionizing Dose; Single Event Transient; Transient propagation; Transient response;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994576
