Title :
MUSCA SEP3 contributions to investigate the direct ionization proton upset in 65nm technology for space, atmospheric and ground applications
Author :
Hubert, G. ; Duzellier, S. ; Bezerra, F. ; Ecoffet, R.
Author_Institution :
French Aerosp. Lab. (ONERA), Toulouse, France
Abstract :
This paper presents the investigation of upset induced by direct ionisation of proton in 65nm technology and evaluates the operational SER consequences in space, atmospheric and ground environments.
Keywords :
CMOS integrated circuits; SRAM chips; silicon-on-insulator; CMOS; MUSCA SEP contributions; SOI SRAM; Si; atmospheric applications; direct ionisation; ground applications; multiscales single event phenomena predictive platform; operational SER consequences; silicon-on-insulator technology; single event rate; size 65 nm; space applications; Neutrons; Protons; Silicon; Single event upset; Topology; direct ionization of proton; nanometric technology; operational SER; space — atmospheric — ground applications;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994577
