Title :
Collected charge analysis for a new advanced transient model by TCAD simulation in 90nm technology
Author :
Artola, L. ; Hubert, G. ; Bezerra, F. ; Duzellier, S. ; Castellani-Coulié, K.
Author_Institution :
ONERA, Toulouse, France
Abstract :
TCAD simulations of a 90nm CMOS bulk technology have been performed to investigate how technologies parameters impact on collection charge leading to Single Event Effects. This work proposes an updated advanced collection model.
Keywords :
CMOS integrated circuits; circuit CAD; circuit simulation; technology CAD (electronics); transient analysis; CMOS bulk technology; TCAD simulation; charge analysis; single event effects; size 90 nm; transient model; Doping profiles; Junctions; Mathematical model; Semiconductor process modeling; Substrates; Transient analysis; Charge collection model; Heavy Ion; TCAD simulation; depletion zone; single event effect;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994578
