Title :
Electromigration In Cu/Sn-58Bi/Cu Interconnects
Author :
Yang, Q.L. ; Guo, J.D. ; Shang, J.K.
Author_Institution :
Inst. of Metal Res., Shenyang
Abstract :
The microstructural changes on the surface of Cu/Sn-58Bi/Cu interconnects, under current stressing of 2.7 times 104A/cm2 95degC for 60 hrs, are examined in this paper. At the anode side, the Bi phase accumulated in front of the intermetallic compound (IMC), and bumps of Bi rich solder extruded out of the surface along the IMC/solder interface. At the cathode side, a Bi depleted zone appeared, which was composed of Sn rich particles and tiny Bi-rich particles. After grinding and polishing, a continuous Bi layer was observed accumulated in front of the IMC at the anode side, which caused a reliability concern in the solder joints.
Keywords :
bismuth alloys; copper alloys; current density; electromigration; integrated circuit interconnections; integrated circuit reliability; solders; surface structure; tin alloys; CuSn-BiCu; current stressing; electromigration; grinding; intermetallic compound; microstructural parameters; polishing; solder interconnects; solder joint reliability; temperature 95 C; time 60 hr; Aging; Anodes; Bismuth; Copper; Current density; Electromigration; Materials science and technology; Microstructure; Soldering; Tin;
Conference_Titel :
Electronic Packaging Technology, 2007. ICEPT 2007. 8th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-1392-8
Electronic_ISBN :
978-1-4244-1392-8
DOI :
10.1109/ICEPT.2007.4441518
