Title :
Analysis of the single event effects for a 90nm CMOS phase-locked loop
Author :
Kauppila, A.V. ; Loveless, T.D. ; Vaughn, G.L. ; Bhuva, B.L. ; Massengill, L.W. ; Holman, W.T.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
A novel approach towards comparing single-event (SE) vulnerability of various components at the function level for a phase-locked loop (PLL) is presented. The technique uses unlock durations and maximum frequency difference after a SE hit to analyze the relative vulnerability of PLL sub-circuits.
Keywords :
CMOS integrated circuits; integrated circuit reliability; phase locked loops; CMOS phase locked loop; PLL sub-circuit; single event effect analysis; single event vulnerability; size 90 nm; Charge pumps; Integrated circuit modeling; Phase frequency detector; Phase locked loops; Time frequency analysis; Transistors; Voltage-controlled oscillators; Phase locked loops; single event transients;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994580
