Title :
Analyze of current components in NMOS single event transient
Author :
Zheng, Liu ; Shuming, Chen ; Bin, Liang ; Biwei, Liu ; Zhenyu, Zhao
Author_Institution :
Coll. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
3D mixed-mode simulation is used to research current components of SET current pulse in inverter chain, compared with that in a single NMOS. It is found that parasitic bipolar conduction current is the major component in SET current of single NMOS, but not in deep-submicron CMOS circuit. The paper provides a detailed discussion of source current in SET and it shows that negative and positive components of source current are related to bipolar amplification and diffusion of carriers respectively.
Keywords :
CMOS integrated circuits; MOSFET; circuit simulation; invertors; technology CAD (electronics); 3D mixed-mode simulation; NMOS single event transient; SET current pulse; bipolar amplification; parasitic bipolar conduction current; source current; Integrated circuit modeling; Inverters; MOS devices; Semiconductor device modeling; Semiconductor process modeling; Solid modeling; Substrates; SET current pulse; diffusion current; mixed-mode TCAD simulation; parasitic bipolar conduction; plateau current;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994587
