Title :
Intrinsic microcrystalline silicon (μc-Si:H)-a promising new thin film solar cell material
Author :
Meier, J. ; Dubail, S. ; Fluckiger, Ralf ; Fischer, D. ; Keppner, H. ; Shah, A.
Author_Institution :
Inst. de Microtechnique, Neuchatel Univ., Switzerland
Abstract :
“Compensated” microcrystalline silicon is obtained by adding 8-20 ppm diborane in the plasma gas phase. p-i-n cells with such i-layers have increased infrared sensitivity when compared to a-Si:H p-i-n cells. The preparation of the world´s first “mixed stacked” a-Si:H/μc-Si:H tandem cell with an initial efficiency of 9.1% is reported. The μc-Si:H cells showed no degradation of the cell performance under intense light-soaking. Typical properties of the μc-Si:H cell indicate that the electronic transport is dominated by the crystalline phase of the material
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; semiconductor device testing; semiconductor doping; semiconductor thin films; silicon; solar cells; μc-Si:H; 9.1 percent; Si:H; crystalline phase; diborane; electronic transport; infrared sensitivity; intrinsic microcrystalline silicon; light soaking tests; mixed stacked a-Si:H/μc-Si:H tandem cell; p-i-n cells; plasma gas phase; properties; solar cell; thin film semiconductor; Amorphous materials; Crystalline materials; Crystallization; Degradation; Grain boundaries; PIN photodiodes; Photovoltaic cells; Semiconductor thin films; Silicon; Spectroscopy;
Conference_Titel :
Photovoltaic Energy Conversion, 1994., Conference Record of the Twenty Fourth. IEEE Photovoltaic Specialists Conference - 1994, 1994 IEEE First World Conference on
Conference_Location :
Waikoloa, HI
Print_ISBN :
0-7803-1460-3
DOI :
10.1109/WCPEC.1994.519985
