• DocumentCode
    2905808
  • Title

    Boundary element simulation of electron trajectories for a field emitter

  • Author

    Zaidman, E.G. ; Jensen, K.L. ; Phillips, P.M. ; Kodis, M.A.

  • Author_Institution
    Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA
  • fYear
    1996
  • fDate
    3-5 June 1996
  • Firstpage
    103
  • Abstract
    Summary form only given. The details of the electron emission from field emitter array structures and trajectories into the acceleration region of the gun structure are required for the design of proposed next generation inductive output amplifiers (IOAs). A model that corresponds well to the actual geometry of the gated field emitter is expected to provide a more accurate comparison with the experimentally measured quantities. The axially symmetric unit cell model selected consists of an anode, a gate with hole, and a base plane with a vertical emitter tip protruding. The small sizes characteristic of the apex of the emitter tips in comparison to the size and distances of the other electrodes suggest the use of a nonuniform discretization of the computational domain. The use of typical finite-difference formulations with uniform mesh is therefore contraindicated. A variable-mesh finite-difference or finite element technique could be used. However, because of the sensitivity of the emission upon the local geometry in the small region near the emitter tip, a boundary-element model was chosen. The boundary element technique discretizes the boundary into sections (in our model, annular ribbons). These sections are taken to be quite small in the vicinity of edges and corners and increase in size in the smooth boundary areas. The list of boundary elements and their physical attributes is developed from a parameterization suggested by experimentally pertinent quantities. These quantities include work function, potential, tip radius, tip height, gate hole radius, base-gate distance, gate-anode distance, gate thickness, and type of tip, i.e., sphere on cone, ellipsoid, tip on post, post height.
  • Keywords
    vacuum microelectronics; annular ribbons; axially symmetric unit cell model; base-gate distance; boundary element simulation; electron emission; electron trajectories; field emitter array; finite element technique; finite-difference formulations; gate hole radius; gate thickness; gate-anode distance; gated field emitter; gun structure; inductive output amplifiers; potential; tip height; tip radius; tip type; variable-mesh finite-difference; vertical emitter tip; work function; Acceleration; Anodes; Electrodes; Electron emission; Ellipsoids; Field emitter arrays; Finite difference methods; Finite element methods; Geometry; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-3322-5
  • Type

    conf

  • DOI
    10.1109/PLASMA.1996.550225
  • Filename
    550225