Scaled accumulation FETs for ultra-low power logic

Ultra-low power systems require very low standby power and operate at moderate speeds. Traditionally, the normal surface channel inversion (SCI) FET would be considered better for such applications when compared to the buried channel (BC) FET, since the BC FET has always shown more short channel effects in past research. However, past comparisons between the two FETs have been done with the highest frequency in mind and the same conclusion need not hold true for moderate speed, ultra-low power applications. Due to a better subthreshold slope and negligible band to band tunneling leakage at the drain-halo and drain-channel region, the BC FET is better suited for such applications.