DocumentCode
2906251
Title
In-situ study of acoustomigration by scanning acoustic force microscopy
Author
Hesjedal, T. ; Kubat, F. ; Mohanty, J. ; Ruile, W. ; Reindl, L.
Author_Institution
Paul Drude Inst., Berlin, Germany
Volume
2
fYear
2003
fDate
5-8 Oct. 2003
Firstpage
1483
Abstract
High-power operation of surface acoustic wave devices may lead to stress induced material transport, so-called acoustomigration. We used scanning acoustic force microscopy (SAFM) to study acoustomigration of metal structures in-situ, i.e. during the high-power loading of the device. SAFM allows for the simultaneous measurement of the acoustic wavefield and the topography with submicron lateral resolution. We present acoustic wavefield and topographic image sequences giving a clear insight into the nature of the film damage on a submicron scale. The 900 MHz test structures were fabricated on 36°YX-LiTaO3 incorporating 420 nm tick Al electrodes. By correlating the acoustic wavefield mapping and the local changes in the topography point-by-point, already the initial changes of the granular structure that lead to acoustomigration can be visualized.
Keywords
acoustic microscopy; electromigration; scanning probe microscopy; surface acoustic wave devices; 420 nm; 900 MHz; LiTaO; acoustic wavefield mapping; acoustomigration; film damage; granular structure; high-power operation; in-situ study; metal structures; scanning acoustic force microscopy; stress induced material transport; submicron lateral resolution; submicron scale; surface acoustic wave devices; test structures; topographic image sequences; Acoustic devices; Acoustic materials; Acoustic measurements; Acoustic testing; Acoustic waves; Image sequences; Microscopy; Stress; Surface acoustic wave devices; Surface topography;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN
0-7803-7922-5
Type
conf
DOI
10.1109/ULTSYM.2003.1293186
Filename
1293186
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