DocumentCode
2906296
Title
Floating millivolt reference for PTAT current generation in Subthreshold MOS LSIs
Author
Ueno, Ken ; Hirose, Tetsuya ; Asai, Tetsuya ; Amemiya, Yoshihito
Author_Institution
Dept. of Electr. Eng., Hokkaido Univ., Sapporo
fYear
2007
fDate
27-30 May 2007
Firstpage
3748
Lastpage
3751
Abstract
A floating millivolt reference circuit to generate a PTAT current was developed by using MOSFETs operated in the subthreshold region. The circuit generates a floating voltage of about 10 mV. The variations in the reference are plusmn2.7 % in a temperature range from -20 to 100 degC. The accuracy of the reference circuit can be improved to plusmn0.3 % with a correction technique using a curvature-correction circuit. The total power consumption of the circuit was 4.6muW at 100 degC.
Keywords
MOSFET circuits; large scale integration; reference circuits; -20 to 100 C; 4.6 muW; MOSFET; curvature-correction circuit; floating millivolt reference circuit; power consumption; proportional to absolute temperature current generation; subthreshold MOS LSI; Battery charge measurement; Circuits; Intelligent sensors; MOSFETs; Photonic band gap; Resistors; Signal generators; Subthreshold current; Temperature sensors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location
New Orleans, LA
Print_ISBN
1-4244-0920-9
Electronic_ISBN
1-4244-0921-7
Type
conf
DOI
10.1109/ISCAS.2007.378776
Filename
4253496
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