Gate Failures Effectively Shape Multiplexing

Author

Beiu, V. ; Ibrahim, W. ; Alkhawwar, Y.A. ; Sulieman, M.H.

Author_Institution

United Arab Emirates Univ., Al Ain

fYear

2006

fDate

4-6 Oct. 2006

Firstpage

29

Lastpage

40

Abstract

This paper investigates the behavior of multiplexing (MUX) schemes in combination with the elementary gates. The two schemes under investigation are majority (MAJ) and NAND MUX. The simulation results presented here are for single-electron technology, but could easily be extended to CMOS. The components of the gates have been subjected only to geometric variations. Firstly, the gates and the two MUX schemes are analyzed theoretically. Secondly, simulations using probability transfer matrices (PTM) allow evaluating both MUX schemes at a redundancy factor R = 6. Finally, the gates are compared in terms of their intrinsic probability of failure (with respect to geometric variations), and the two MUX schemes are weighted against the reliability enhancements they are bringing into the system. By comparing the simulation results from PTM with the ones based on (geometric) variations, this study gives deeper insights into the behavior of MUX schemes, and show that the gates play a major role, strongly affecting MUX systems

Keywords

CMOS integrated circuits; Monte Carlo methods; NAND circuits; failure analysis; integrated circuit reliability; logic gates; logic testing; matrix algebra; multiplexing; probability; redundancy; single electron devices; CMOS; NAND MUX; elementary gates; failure intrinsic probability; gate failures; geometric variations; majority MUX; multiplexing schemes; probability transfer matrices; redundancy; reliability enhancements; single-electron technology; CMOS technology; Circuit simulation; Nanoscale devices; Performance analysis; Power dissipation; Power system reliability; Redundancy; Shape; Solid modeling; Uncertainty;

fLanguage

English

Publisher

ieee

Conference_Titel

Defect and Fault Tolerance in VLSI Systems, 2006. DFT '06. 21st IEEE International Symposium on

Conference_Location

Arlington, VA

ISSN

1550-5774

Print_ISBN

0-7695-2706-X

Type

conf

DOI

10.1109/DFT.2006.33

Filename

4030913