Title :
CMOS Gyrator-C Active Transformers
Author_Institution :
Dept. of Electr. & Comput. Eng., Ryerson Univ., Toronto, Ont.
Abstract :
This paper presents a systematic approach to synthesize gyrator-C active transformers using MOS transistors. The self and mutual inductances of ideal and non-ideal active transformers are investigated in detailed and the intrinsic relation between the self and mutual inductances is derived. The configurations of gyrator-C active transformers with multiple primary and secondary windings are developed. Practical implementations of the proposed gyrator-C active transformers are realized in TSMC´s 1.8V 0.18mum CMOS technology and their characteristics are analyzed using Spectre from Cadence design systems with BSIM3.3 device models. Simulation results are presented.
Keywords :
CMOS integrated circuits; gyrators; impedance convertors; 0.18 micron; 1.8 V; CMOS technology; MOS transistors; gyrator-C active transformers; mutual inductances; self inductance; Active inductors; CMOS technology; Inductance; MOSFETs; Q factor; Semiconductor device modeling; Silicon; Spirals; Transconductors; Transformers;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.378792
