Title :
A new CMOS voltage reference scheme based on Vth-difference principle
Author :
Toledo, Luis ; Lancioni, Walter ; Petrashin, Pablo ; Dualibe, Carlos ; Vázquez, Carlos
Author_Institution :
Laboratorio de Microelectron., Univ. Catolica de Cordoba
Abstract :
A new CMOS voltage reference, which takes advantage of the temperature dependence of NMOS and PMOS threshold voltages, is presented. Due to the circuit architecture the mobility factor is completely cancelled. It does not use resistors and all transistors works in strong inversion. The circuit is simple, opamp-less and can be implemented in a standard CMOS process. When the input power supply changes from 1.8V to 2.1V and the temperature changes from -20 to 80degC, simulations for the reference circuit using the proposed architecture shows an output voltage of 1.184V and a TFC of 100 ppm/degC.
Keywords :
CMOS integrated circuits; reference circuits; -20 to 80 C; 1.8 to 2.1 V; CMOS process; CMOS voltage reference scheme; NMOS threshold voltages; PMOS threshold voltages; Vth-difference principle; voltage reference circuit; CMOS technology; Circuit simulation; Digital-analog conversion; Equations; Low voltage; MOS devices; MOSFETs; Power supplies; Temperature dependence; Threshold voltage;
Conference_Titel :
Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on
Conference_Location :
New Orleans, LA
Print_ISBN :
1-4244-0920-9
Electronic_ISBN :
1-4244-0921-7
DOI :
10.1109/ISCAS.2007.377876