Research on impacts of different parameters on transient power loss of IGBT

Author

Gaoyu Zou ; Zhengming Zhao

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing, China

fYear

2013

fDate

26-29 Oct. 2013

Firstpage

490

Lastpage

495

Abstract

Power loss of semiconductor devices is the critical element, reflecting efficiency of the converter system indirectly. The loss of devices is consisted of steady state loss and transient loss. This paper introduces a functional model of transient power loss for IGBT to study the impact of different parameters on transient loss. Both turn-on and turn-off processes are analyzed in detail and mathematic expressions of power loss considering stray inductance are given. Then the change laws of transient power loss of IGBT with several parameters including DC-link voltage, junction temperature of IGBT and stray inductance of IGBT loop are studied by a number of experimental results, which also verify the theoretic analysis.

Keywords

inductance; insulated gate bipolar transistors; losses; power convertors; power semiconductor devices; DC-link voltage; IGBT loop; converter system efficiency reflection; junction temperature; parameter impacts; semiconductor devices; steady state loss; stray inductance; transient power loss; turn-off processes; turn-on processes; Current measurement; Inductance; Insulated gate bipolar transistors; Integrated circuits; Junctions; Temperature measurement; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Machines and Systems (ICEMS), 2013 International Conference on

Conference_Location

Busan

Print_ISBN

978-1-4799-1446-3

Type

conf

DOI

10.1109/ICEMS.2013.6713115

Filename

6713115