Title :
Research on impacts of different parameters on transient power loss of IGBT
Author :
Gaoyu Zou ; Zhengming Zhao
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
Power loss of semiconductor devices is the critical element, reflecting efficiency of the converter system indirectly. The loss of devices is consisted of steady state loss and transient loss. This paper introduces a functional model of transient power loss for IGBT to study the impact of different parameters on transient loss. Both turn-on and turn-off processes are analyzed in detail and mathematic expressions of power loss considering stray inductance are given. Then the change laws of transient power loss of IGBT with several parameters including DC-link voltage, junction temperature of IGBT and stray inductance of IGBT loop are studied by a number of experimental results, which also verify the theoretic analysis.
Keywords :
inductance; insulated gate bipolar transistors; losses; power convertors; power semiconductor devices; DC-link voltage; IGBT loop; converter system efficiency reflection; junction temperature; parameter impacts; semiconductor devices; steady state loss; stray inductance; transient power loss; turn-off processes; turn-on processes; Current measurement; Inductance; Insulated gate bipolar transistors; Integrated circuits; Junctions; Temperature measurement; Transient analysis;
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2013 International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4799-1446-3
DOI :
10.1109/ICEMS.2013.6713115
