Title :
Single event transients in scaled CMOS operational amplifiers
Author :
Chukwuma, Ozegbe ; Attia, John
Author_Institution :
Dept. of Electr. & Comput. Eng., Prairie View A&M Univ., Prairie View, TX, USA
Abstract :
Time-domain and a new frequency analysis are used to investigate the effects of SETs in CMOS op amps of different feature sizes. Characterization in the frequency-domain was achieved by using non-linear regression techniques to obtain closed-form expressions of the transients. The full width at half-maximum (FWHM) and peak amplitude of the transient pulses were used for the time-domain analysis. The techniques were used to analyze the propagation of SET in op amps for LETs of 100 and 10 MeV/mg/cm2. It was observed that as the feature size of the op amps decreased, the average product of the peak voltage and FWHM decreased. In addition, as the feature size decreased, the 3-dB frequency of the op amps decreased increased. the abstract; it sets the footnote at the bottom of this column.
Keywords :
CMOS analogue integrated circuits; frequency-domain analysis; operational amplifiers; regression analysis; time-domain analysis; frequency-domain analysis; full width at half-maximum; nonlinear regression techniques; peak amplitude; scaled CMOS operational amplifiers; single event transients; time-domain analysis; transient pulses; Bandwidth; CMOS integrated circuits; Frequency domain analysis; Mathematical model; Operational amplifiers; Transient analysis; Transistors; CMOS Op Amps; Continuous-time Fourier Transform; FFT; Single Event Transient;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994663