Single event transients in scaled CMOS operational amplifiers

Author

Chukwuma, Ozegbe ; Attia, John

Author_Institution

Dept. of Electr. & Comput. Eng., Prairie View A&M Univ., Prairie View, TX, USA

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

301

Lastpage

306

Abstract

Time-domain and a new frequency analysis are used to investigate the effects of SETs in CMOS op amps of different feature sizes. Characterization in the frequency-domain was achieved by using non-linear regression techniques to obtain closed-form expressions of the transients. The full width at half-maximum (FWHM) and peak amplitude of the transient pulses were used for the time-domain analysis. The techniques were used to analyze the propagation of SET in op amps for LETs of 100 and 10 MeV/mg/cm². It was observed that as the feature size of the op amps decreased, the average product of the peak voltage and FWHM decreased. In addition, as the feature size decreased, the 3-dB frequency of the op amps decreased increased. the abstract; it sets the footnote at the bottom of this column.

Keywords

CMOS analogue integrated circuits; frequency-domain analysis; operational amplifiers; regression analysis; time-domain analysis; frequency-domain analysis; full width at half-maximum; nonlinear regression techniques; peak amplitude; scaled CMOS operational amplifiers; single event transients; time-domain analysis; transient pulses; Bandwidth; CMOS integrated circuits; Frequency domain analysis; Mathematical model; Operational amplifiers; Transient analysis; Transistors; CMOS Op Amps; Continuous-time Fourier Transform; FFT; Single Event Transient;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994663

Filename

5994663