DocumentCode :
2906894
Title :
Laser SEL sensitivity mapping of SRAM cells
Author :
Burnell, A.J. ; Chugg, A.M. ; Harboe-Sørensen, R.
Author_Institution :
Radiat. Effects Group, MBDA UK Ltd., Bristol, UK
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
324
Lastpage :
328
Abstract :
It is shown that laser SEL sensitivity mapping at the cell level exhibits a repetitive pattern. In conjunction with depth profiling, individual sensitive regions are shown to be approximate fat ellipsoids, which has implications for SEL specifications in the space environment.
Keywords :
SRAM chips; laser beam effects; SEL specifications; SRAM cells; cell level; depth profiling; fat ellipsoids; individual sensitive regions; laser SEL sensitivity mapping; repetitive pattern; space environment; Absorption; Lasers; Mirrors; Monitoring; Random access memory; Sensitivity; Single event upset; SRAM; Single event effects (SEE); single event latch-up (SEL); single event upset (SEU); test facilities;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2009.5994668
Filename :
5994668
Link To Document :
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