Title :
Bilateral Testing of Nano-scale Fault-tolerant Circuits
Author :
Fang, Lei ; Hsiao, Michael S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Tech, Blacksburg, VA
Abstract :
As the technology enters the nano dimension, the inherent unreliability of nanoelectronics is making fault-tolerant architectures increasingly necessary in building nano systems. Because fault-tolerant hardwares help to mask the effects caused by increased levels of defects, testing the functionality of the chip together with the embedded fault-tolerance becomes a tremendous challenge. In this paper, a new bilateral testing framework for nano circuits is proposed, where multiple stuck-at faults across different modules in a triple module redundancy (TMR) architecture are considered. In addition, a new test generator is presented for the bilateral testing that takes into account the enormous number of bilateral stuck-at faults possible with new types of guidance in the search, and it can generate a set of vectors that can test the TMR-based nano circuit as a single entity. Experimental results reported for ISCAS´85 and ITC99 circuits demonstrate that the bilateral testing can help to capture many more defects which the single stuck-at fault misses
Keywords :
automatic test pattern generation; embedded systems; fault tolerance; integrated circuit testing; logic testing; nanoelectronics; stacking faults; ISCAS´85; ITC99; embedded fault-tolerance; fault-tolerant architectures; fault-tolerant hardwares; nanoelectronics; nanoscale fault-tolerant circuits bilateral testing; nanosystems; stuck-at faults; test generator; triple module redundancy architecture; CMOS technology; Circuit faults; Circuit testing; Computer aided manufacturing; Fault tolerance; Fault tolerant systems; Integrated circuit technology; Microelectronics; Nanoelectronics; Redundancy;
Conference_Titel :
Defect and Fault Tolerance in VLSI Systems, 2006. DFT '06. 21st IEEE International Symposium on
Conference_Location :
Arlington, VA
Print_ISBN :
0-7695-2706-X
DOI :
10.1109/DFT.2006.17