Title :
Indium phosphide-based femtosecond devices for ultrahigh throughput communications and signal-processing systems
Author_Institution :
FESTA Lab., Femtosecond Technol. Res. Assoc., Tsukuba, Japan
Abstract :
Ultrafast optoelectronic devices are crucial for fulfilling the future requirement of network throughput to enter the 1 Tb/s to 10 Tb/s range. A variety of ultrafast phenomena in InP-based semiconductors are attractive for developing such new optoelectronic devices. This paper discusses the requirements of ultrafast optical communication and signal-processing systems and devices necessary for them. Recent advances in the development of ultrafast semiconductor-based optoelectronic devices, such as ultrashort pulse lasers and ultrafast all-optical switches, are described,
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser beam applications; optical communication equipment; optical information processing; optical switches; optoelectronic devices; 1 to 10 Tbit/s; InP; InP-based semiconductors; Tb/s range; indium phosphide-based femtosecond devices; optoelectronic devices; signal-processing system; signal-processing systems; ultrafast all-optical switches; ultrafast optical communication; ultrafast optoelectronic devices; ultrafast phenomena; ultrafast semiconductor-based optoelectronic devices; ultrahigh throughput communications; ultrashort pulse lasers; Indium; Light sources; Optical fiber communication; Optical pulse generation; Optical wavelength conversion; Optoelectronic devices; Semiconductor lasers; Throughput; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773619
