A CMOS class-E Power Amplifiers with Power Control

Author

Gao, Tongqiang ; Li, DongMei ; Chi, Baoyong ; Wang, ZhiHua

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing

fYear

2007

fDate

27-30 May 2007

Firstpage

3900

Lastpage

3903

Abstract

In this paper, a CMOS class-E power amplifier with power control is presented. Its output power could be varied over a broad range with high efficiency by utilizing the combination of the parallel amplification technique and the drain modulation technique. The drain modulation is implemented as a class-S modulator and the output powers of the parallel amplifiers are combined with quarter-wavelength transmission lines. The simulation results show that the power amplifier could achieves a maximum power-added efficiency (PAE) of 47.9% and maintain a PAE higher than 41% over the 140-700mW output power range.

Keywords

CMOS analogue integrated circuits; power amplifiers; power control; 140 to 700 mW; CMOS class-E power amplifiers; class-S modulator; drain modulation; parallel amplification; parallel amplifiers; power control; quarter-wavelength transmission lines; CMOS process; Digital control; High power amplifiers; Power amplifiers; Power control; Power generation; Pulse amplifiers; Radiofrequency amplifiers; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2007. ISCAS 2007. IEEE International Symposium on

Conference_Location

New Orleans, LA

Print_ISBN

1-4244-0920-9

Electronic_ISBN

1-4244-0921-7

Type

conf

DOI

10.1109/ISCAS.2007.377891

Filename

4253534