Room temperature operation of 1.5 μm InAsP/InP strained quantum wire DFB lasers fabricated by mass transport method

A mass transport method has been developed as a high quality quantum wire (QWR) array formation technique in InP systems. It was demonstrated that strained InAsP QWRs with the lateral width less than 20 nm could be formed at the sharp bottom edge of InP v-grooves without any parasitic structures. Their emission peak wavelength and size were controllable by temperature and group v ambient pressure ratio. A distributed feedback (DFB) laser was fabricated by utilizing the mass-transported strained InAsP QWR array on GaInAsP v-grooved substrates as an active grating. Lasing at 1.53 μm at 20°C by pulsed current injection was accomplished. Record low threshold current density of 0.112 kA/cm² was obtained in a broad area laser with a 100 μm-wide and 750 μm-long cavity