Title :
980 nm Al-free ridge waveguide distributed feedback lasers with lateral gain coupling
Author :
Kamp, M. ; Hofmann, J. ; Forchel, A. ; Krakowski, M. ; Rondi, D. ; Guyaux, J.L. ; Chirlias, E. ; Glastre, G. ; Blondeau, R.
Author_Institution :
Tech. Phys., Wurzburg, Germany
Abstract :
We present Al-free gain-coupled lasers emitting at 980 nm with metal gratings patterned laterally to the laser waveguide. The process is based on standard ridge waveguide fabrication and requires no regrowth. For a sufficiently small waveguide, the evanescent field of the laser mode couples to the lateral grating. Ridge waveguide lasers were processed from an MOCVD grown Al free laser structure with a single InGaAs quantum well. The cw threshold currents are around 17 mA for a 1 mm long laser, differential efficiencies are 0.2 W/A. Monomode emission up to output power levels of 25 mW and sidemode suppression ratios of 45 dB have been obtained. The lasers are monomode over a wide range of temperature and current, indicating that the lateral coupling is sufficiently strong for stable DFB operation
Keywords :
III-V semiconductors; MOCVD; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; laser stability; laser transitions; quantum well lasers; ridge waveguides; semiconductor growth; waveguide lasers; 1 mm; 17 mA; 25 mW; 980 nm; Al-free ridge waveguide distributed feedback lasers; InGaAs; InGaAs quantum well lasers; MOCVD grown; cw threshold currents; differential efficiencies; evanescent field; laser mode coupling; laser waveguide; lateral coupling; lateral gain coupling; lateral grating; metal gratings; output power levels; patterned laterally; ridge waveguide lasers; sidemode suppression ratios; single InGaAs quantum well; small waveguide; stable DFB operation; standard ridge waveguide fabrication; Distributed feedback devices; Gratings; Indium gallium arsenide; Laser feedback; Laser modes; MOCVD; Optical coupling; Optical device fabrication; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773625