DocumentCode :
2907032
Title :
Non-thermal interactions between high-strength microwave fields and ceramics
Author :
Booske, J.H. ; Freeman, S.A. ; Cooper, R.F.
Author_Institution :
Wisconsin Univ., Madison, WI, USA
fYear :
1996
fDate :
3-5 June 1996
Firstpage :
106
Abstract :
Summary form only given, as follows. Numerous claims have been made of observations that microwave heating of ceramics promotes faster processing or solid state reaction rates than in conventional furnace heating. Explanations for these observations, as well as the observations themselves, have caused some controversy since then is no verifiable theoretical explanation. Issues of sample temperature measurement also complicate the matter. Our previous experiments with ionic conduction indicated the existence of microwave-induced charge flow in ionic materials due to a high-frequency "ponderomotive" rectification near crystal surfaces. Numerical modeling of high-frequency "ponderomotive pressure" shows that microwave fields can affect the near-surface-layer concentration of defects in ionic materials. The magnitude of this effect is investigated over a range of temperatures, frequencies, field strengths, and material doping. The simulations are also used to determine what role this "microwave effect" could have on diffusion, sintering, and other thermal processing. The results of the computer simulations are compared to experimental measurements of ionic conduction and diffusion.
Keywords :
ceramics; ceramics; computer simulations; crystal surfaces; defect near-surface-layer concentration; diffusion; high-frequency ponderomotive pressure; high-frequency ponderomotive rectification; high-strength microwave fields; ionic conduction; ionic materials; microwave effect; microwave heating; microwave-induced charge flow; nonthermal interactions; numerical modeling; sample temperature measurement; sintering; solid state reaction rates; thermal processing; Ceramics; Conducting materials; Crystalline materials; Electromagnetic heating; Furnaces; Numerical models; Semiconductor process modeling; Solid state circuits; Temperature distribution; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
Conference_Location :
Boston, MA, USA
ISSN :
0730-9244
Print_ISBN :
0-7803-3322-5
Type :
conf
DOI :
10.1109/PLASMA.1996.550232
Filename :
550232
Link To Document :
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