Title :
Proton irradiation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes
Author :
Harris, Richard D. ; Farr, William H. ; Becker, Heidi N.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Degradation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes caused by proton irradiation is studied for the first time. Substantial changes in the dark I-V characteristics as well as increases in the dark count rate are observed after irradiation. There are no systematic changes in photon count rate observed or in the amount of after-pulsing. The devices are rendered non-operational following a fluence of 8.1×1010 50-Mev protons/cm2 for room temperature operation.
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; proton effects; Geiger-mode avalanche photodiodes; InGaAsP-InP; dark I-V characteristics; dark count rate; photon count rate; proton irradiation; temperature 293 K to 298 K; Indium gallium arsenide; Photonics; Protons; Radiation effects; Semiconductor device measurement; Temperature measurement; Voltage measurement; Geiger-mode; avalanche photodiode; optical communications; proton irradiation;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994684
