Title :
Properties of solution TMITM as an OMVPE source
Author :
Ravetz, M.S. ; Smith, L.M. ; Rushworth, S.A. ; Leese, A.B. ; Kanjolia, R. ; Davies, J.I. ; Blunt, R.T.
Author_Institution :
Epichem Ltd., Bromborough, UK
Abstract :
Solid trimethylindium (TMI) is the precursor of choice for the vast majority of MOVPE applications. However consistent pick up has been a problem under normal operating conditions. Epichem´s solutions to this problem have included solution TMITM (TMI suspended in a high boiling point amine adducted to TMI) and dual reverse flow bubblers of solid TMI. A detailed investigation of solution TMITM is being continued at Epichem in order to understand the chemical and physical properties of this indium source. Results have proved solution TMI to have a more consistent `pick up´ than any alternative method and it has been identified as the best precursor for low oxygen applications
Keywords :
III-V semiconductors; MOCVD; indium compounds; organometallic compounds; semiconductor growth; vapour phase epitaxial growth; InP; OMVPE source; chemical properties; dual reverse flow bubblers; high boiling point amine; indium source; low oxygen applications; physical properties; pick up; solution TMI; trimethylindium; Atmosphere; Chemical analysis; Dynamic equilibrium; Glass; Monitoring; Nitrogen; Solids; Streaming media; Temperature control;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773632
