Title :
1.3 μm InAsP-GaInAsP-InGaP strain-compensated MQW lasers grown by GSMBE
Author :
Saito, K. ; Shimizu, H. ; Kumada, K. ; Yamanaka, N. ; Mukaihara, T. ; Yokouchi, N. ; Kasukawa, A.
Author_Institution :
R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
We studied strain-compensated MQW lasers which have GaInAsP intermediate layer between 1.45% compressively strained InAsP wells and 0.98% tensile strained InGaP barriers by gas-source MBE. X-ray diffraction measurements revealed that monocrystalline was confirmed even in 15 strained quantum wells. Threshold current density per well in lasers decreased with increasing the number of wells. The temperature characteristics of threshold current density and differential quantum efficiency were improved with increasing the number of wells. The BH lasers which have 15 quantum wells showed excellent performance such as low threshold current (5.2 mA@ 20°C) and high To (75 K@ 20°C-70°C)
Keywords :
III-V semiconductors; X-ray diffraction; current density; gallium arsenide; gallium compounds; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.3 mum; 20 C; 20 to 70 C; 5.2 mA; 75 K; BH lasers; GSMBE growth; GaInAsP intermediate layer; InAsP-GaInAsP-InGaP; InAsP/GaInAsP/InGaP strain-compensated MQW lasers; X-ray diffraction measurements; compressively strained InAsP wells; differential quantum efficiency; gas-source MBE; low threshold current; monocrystalline; quantum wells; strained quantum wells; temperature characteristics; tensile strained InGaP barriers; threshold current density; Capacitive sensors; Gas lasers; Indium phosphide; Quantum well devices; Quantum well lasers; Semiconductor lasers; Temperature; Threshold current; X-ray diffraction; X-ray lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773638
