Title :
Distributed waveguide-integrated InGaAs MSM photodetectors for high-efficiency and ultra-wideband operation
Author :
Böttcher, E.H. ; Pfitzenmaier, H. ; Dröge, E. ; Kollakowski, S.T. ; Strittmatter, A. ; Bimberg, D. ; Steingruber, R.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
A considerable improvement of bandwidth and efficiency of monolithically integrated distributed InGaAs MSM photodetectors is reported. From a thorough modeling, design criteria for the structural parameters of the optical waveguide and absorber as well as the electrical transmission line are derived which permit the optimization of the quantum efficiency for ultrawideband operation (100-200 GHz). Our experimental results are in very good agreement with the model. Distributed detectors incorporating a ridge waveguide structure embedded in regrown InP are additionally demonstrated to significantly reduce the optical loss of previously reported devices
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; metal-semiconductor-metal structures; optical waveguides; optimisation; photodetectors; ridge waveguides; semiconductor device models; 100 to 200 GHz; InGaAs; InP; design criteria; distributed waveguide-integrated InGaAs MSM photodetectors; electrical transmission line; experimental results; high-efficiency; modeling; monolithically integrated; optical absorber; optical loss; optical waveguide; optimization; quantum efficiency; regrown InP; ridge waveguide structure; structural parameters; ultra-wideband operation; ultrawideband operation; Bandwidth; Design optimization; Indium gallium arsenide; Indium phosphide; Optical design; Optical waveguides; Photodetectors; Structural engineering; Transmission lines; Ultra wideband technology;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773639
