Title :
A new approach in predicting the response of silicon p-i-n diodes used as radiation monitoring sensors up to very high fluences
Author :
Mekki, J. ; Moll, M. ; Fahrer, M. ; Glaser, M. ; Dusseau, L.
Author_Institution :
CERN, Geneva, Switzerland
Abstract :
In this work the effect of radiation damage on Silicon p-i-n diodes has been studied. I-V characteristics of unirradiated and irradiated diodes up to 6.3×1015 neq/cm2 have been measured and analyzed to give a more comprehensive understanding of the Si-bulk properties after irradiation.
Keywords :
elemental semiconductors; nuclear electronics; p-i-n diodes; radiation hardening (electronics); radiation monitoring; semiconductor device measurement; silicon; silicon radiation detectors; Si; current-voltage characteristics; irradiated diode; radiation damage; radiation monitoring sensor; silicon p-i-n diode response prediction; silicon-bulk properties; unirradiated diode; Conductivity; Current measurement; P-i-n diodes; Silicon; Temperature measurement; Voltage measurement; accelerators; p-i-n diodes; particle beams; radiation damage; radiation monitoring;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994691
