Title :
Mode field converter integrated GaInAsP laser diodes with monitoring photodiodes through semiconductor/air Bragg reflector
Author :
Muliaihara, T. ; Yamanaka, N. ; Iwai, N. ; Funabashi, M. ; Arakawa, S. ; Ishikawa, T. ; Kasukawa, A.
Author_Institution :
R&D Lab., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
Mode field converter (MFC) integrated 1.3 μm GaInAsP laser diode with a monitoring photodiode through a semiconductor/air Bragg reflector (SABAR) has been successfully demonstrated. Instead of conventional cleavage, the SABAR can provide not only Fabry-Perot resonance with high reflectivity, but also possibility of integration of laser with the other functional devices. We have obtained a threshold current of 22 mA in the followed laser structure (L=270 μm, W=7 μm, SABAR pairs N=1), and detector photocurrent of 1.13 mA (@5 mW). The experimental SABAR reflectivity is 50%, which is estimated by threshold characteristics and efficiency of light output power. The laser has a mode field converter (MFC) section, resulting in narrow beam divergence 11° along vertical axis. This integrated laser is very promising candidate for coming optical module in low power consumption and low cost access network systems
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; laser modes; laser transitions; mirrors; monitoring; photodiodes; reflectivity; semiconductor lasers; 1.13 mA; 1.3 mum; 22 mA; 270 mum; 5 mW; 7 mum; Fabry-Perot resonance; GaInAsP; GaInAsP laser diode; SABAR; SABAR pairs; SABAR reflectivity; cleavage; detector photocurrent; functional devices; high reflectivity; laser structure; light output power; low cost access network systems; low power consumption; mode field converter integrated GaInAsP laser diodes; monitoring photodiode; monitoring photodiodes; narrow beam divergence; optical module; semiconductor/air Bragg reflector; threshold characteristics; threshold current; vertical axis; Diode lasers; Fabry-Perot; Laser modes; Monitoring; Photoconductivity; Photodiodes; Reflectivity; Resonance; Semiconductor lasers; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773642