Title :
Gain linearity and bandwidth improvement of InP-based transimpedance amplifiers by feedback loop designs
Author :
Chien, Feng-Tso ; Chan, Yi-Jen
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
InP-based transimpedance amplifiers with two different active feedback loop designs, i.e. a common-gate FET (CG-FET) feedback and a gate-source connected FET (GS-FET) feedback, have been fabricated, characterized, and compared with each other. Owing to a better linearity of a feedback resistance in GS-FETs, amplifiers with this feedback design exhibit a largeΔVout at a small input current. Furthermore, the operational bandwidth of GS-FET feedback amplifier is also improved by eliminating the associated parasitic effect
Keywords :
III-V semiconductors; amplifiers; feedback amplifiers; field effect devices; indium compounds; FET feedback; GS-FET feedback amplifier; InP; InP-based transimpedance amplifiers; active feedback loop designs; associated parasitic effect; bandwidth improvement; common-gate FET; feedback design; feedback loop designs; feedback resistance; gain linearity; gate-source connected FET; largeΔVout; linearity; operational bandwidth; small input current; Bandwidth; Circuits; FETs; Feedback loop; Gold; Indium phosphide; Linearity; Optical amplifiers; Optical feedback; Resistors;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773646
