• DocumentCode
    2907395
  • Title

    Electron interactions with CF/sub 4/

  • Author

    Christophorou, L.G. ; Olthoff, J. ; Mangina, R.

  • Author_Institution
    Nat. Inst. of Stand. & Technol., USA
  • fYear
    1996
  • fDate
    3-5 June 1996
  • Firstpage
    107
  • Abstract
    Summary form only given, as follows. Carbon tetrafluoride (CF/sub 4/) is one of the most widely used components of feed gas mixtures employed for a variety of plasma assisted materials-processing applications. The CF/sub 4/ molecule has no stable excited states and in a plasma environment is an ideal source of reactive species, especially F atoms. To assess the behavior of CF/sub 4/ in the semiconductor industry and its other applications, it is necessary to have accurate basic information on its fundamental properties and reactions, particularly on its electronic and ionic interactions and its electron collision processes at low (<100 eV). In this paper we synthesize and assess the available information on the cross sections and/or rate coefficients of the collisional interactions of CF/sub 4/ with electrons. Assessed information is presented on: (i) cross sections for electron scattering (total, elastic, momentum, differential, inelastic), electron impact ionization (total, partial, dissociative), electron impact dissociation (total, and for dissociative excitation), and electron attachment (total, and for specific anions); (ii) coefficients for electron transport (electron drift velocity, lateral and longitudinal electron diffusion coefficients), electron attachment, and electron impact ionization; and (iii) cross section sets and electron energy distribution functions derived from analyses of electron transport data. Some data on CF/sub 4/ mixtures and on CF/sub 4/ radicals will be presented also.
  • Keywords
    organic compounds; carbon tetrafluoride; collisional interactions; electron attachment; electron collision processes; electron energy distribution functions; electron impact dissociation; electron impact ionization; electron interactions; electron scattering; electron transport; electronic interactions; feed gas mixtures; ionic interactions; plasma assisted materials-processing applications; rate coefficients; reactive species; semiconductor industry; Charge carrier processes; Electronics industry; Electrons; Feeds; Impact ionization; Plasma applications; Plasma materials processing; Plasma properties; Plasma sources; Plasma stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 1996. IEEE Conference Record - Abstracts., 1996 IEEE International Conference on
  • Conference_Location
    Boston, MA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-3322-5
  • Type

    conf

  • DOI
    10.1109/PLASMA.1996.550234
  • Filename
    550234