DocumentCode
2907420
Title
Optical input power tolerance of InGaAsP electroabsorption modulator
Author
Hoshi, Noriyoshi ; Mitsuma, Takashi ; Tanaka, Hideaki ; Matsushtma, Y.
Author_Institution
Japan Aviation Electron. Ind. Ltd., Tokyo, Japan
fYear
1999
fDate
1999
Firstpage
115
Lastpage
118
Abstract
We present long-term life tests of EA modulator modules under high optical input power over +10 dBm for the first time. The module tested under +13 dBm input with -10 V bias did not show any degradation over 3700 hrs. In addition, we discuss degradation mechanisms in modules tested over +15 dBm input with -10 V bias
Keywords
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; life testing; modules; optical communication equipment; optical testing; semiconductor device testing; 10 V; 3700 h; EA modulator modules; InGaAsP; InGaAsP electroabsorption modulator; degradation mechanisms; high optical input power; life testing; long-term life tests; module test; optical input power tolerance; Absorption; Breakdown voltage; Electronic equipment testing; Life testing; Optical attenuators; Optical modulation; Optical solitons; Power generation; Power system reliability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773648
Filename
773648
Link To Document