LP-HVPE growth of S, Fe and undoped InP

Author

Jahan, D. ; Söderström, D. ; Lourdudoss, S.

Author_Institution

Lab. of Semicond. Mater., R. Inst. of Technol., Stockholm, Sweden

fYear

1999

fDate

1999

Firstpage

123

Lastpage

126

Abstract

This study presents the result of low-pressure hydride vapour phase epitaxy of undoped and doped InP carried out in a commercial equipment designed for 3-inch wafers. Specially, InP:Fe growth with ferrocene has been investigated in order to provide high resistive semi-insulating material. Besides, a very good planarisation around mesas has been achieved by selective regrowth. Finally, to validate the equipment, Fabry-Perot lasers with a modulation bandwidth of 15 GHz have been realised by burying mesas with regrown InP:Fe

Keywords

III-V semiconductors; indium compounds; iron; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; sulphur; vapour phase epitaxial growth; 15 GHz; 3 inch; Fabry-Perot laser; InP; InP:Fe; InP:S; LP-HVPE growth; doped InP; electrical resistivity; ferrocene; low-pressure hydride vapour phase epitaxy; mesa planarisation; modulation bandwidth; selective regrowth; semi-insulating material; undoped InP; Epitaxial growth; Gallium compounds; Indium phosphide; Inductors; Iron; Nitrogen; Ovens; Pressure control; Temperature; Weight control;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773650

Filename

773650