DocumentCode
2907511
Title
Low temperature growth of GaInAs by MOVPE
Author
Oe, Kunishige ; Okamoto, Hiroshi ; Nakao, Masashi
Author_Institution
Kyoto Inst. of Technol., Japan
fYear
1999
fDate
1999
Firstpage
131
Lastpage
134
Abstract
GaInAs epitaxial layers were grown at low temperature by Metalorganic Vapor Phase Epitaxy in order to develop metastable semiconductor materials of GaInAsBi. It is found that the limiting factor to lower the growth temperature in this growth system is the decomposition of TEGa in the presence of TMIn. Using InP dummy wafer to decompose the TEGa, GaInAs epilayers of good optical quality were grown even at 420 C
Keywords
III-V semiconductors; MOCVD coatings; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 420 C; GaInAs; GaInAsBi; InP dummy wafer; MOVPE; TEGa; TMIn; decomposition; epitaxial layers; good optical quality; limiting factor; low temperature growth; Epitaxial growth; Epitaxial layers; Indium phosphide; Inductors; Metastasis; Optical materials; Semiconductor materials; Substrates; Temperature distribution; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location
Davos
ISSN
1092-8669
Print_ISBN
0-7803-5562-8
Type
conf
DOI
10.1109/ICIPRM.1999.773652
Filename
773652
Link To Document