Title :
A low power implementation for the transmit path of a UWB transceiver
Author :
Aggarwal, S. ; Leenaerts, D. ; van de Beek, R. ; van der Weide, G. ; Harish, K.S. ; Bergervoet, J. ; Landesman, A. ; Zhang, Y. ; Razzell, C. ; Waite, H. ; Roovers, R.
Author_Institution :
Philips Semicond., San Jose, CA, USA
Abstract :
A low power transmit path for a multiband OFDM UWB transceiver is presented. It features wideband elliptic baseband filters, a VGA with dynamic range of 12dB, an upconversion mixer and an RF output stage with power of -7dBm (3.2-4.8GHz band). The transmit path including frequency synthesizer is realized in 0.25μm SiGe BiCMOS (70GHz ft) technology. Results show current consumption of 43mA (at 2.7V) for the complete transmit path.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; OFDM modulation; active filters; amplifiers; elliptic filters; frequency synthesizers; low-power electronics; microwave receivers; mixers (circuits); transceivers; ultra wideband technology; 0.25 micron; 2.7 V; 3.2 to 4.8 GHz; 43 mA; BiCMOS technology; RF output stage; SiGe; frequency synthesizer; multiband OFDM UWB transceiver; transmit path; upconversion mixer; variable gain amplifier; wideband elliptic baseband filters; Baseband; Dynamic range; Filters; Frequency synthesizers; Germanium silicon alloys; OFDM; Radio frequency; Silicon germanium; Transceivers; Wideband;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568629
