A low power implementation for the transmit path of a UWB transceiver

Author

Aggarwal, S. ; Leenaerts, D. ; van de Beek, R. ; van der Weide, G. ; Harish, K.S. ; Bergervoet, J. ; Landesman, A. ; Zhang, Y. ; Razzell, C. ; Waite, H. ; Roovers, R.

Author_Institution

Philips Semicond., San Jose, CA, USA

fYear

2005

fDate

18-21 Sept. 2005

Firstpage

149

Lastpage

152

Abstract

A low power transmit path for a multiband OFDM UWB transceiver is presented. It features wideband elliptic baseband filters, a VGA with dynamic range of 12dB, an upconversion mixer and an RF output stage with power of -7dBm (3.2-4.8GHz band). The transmit path including frequency synthesizer is realized in 0.25μm SiGe BiCMOS (70GHz f_t) technology. Results show current consumption of 43mA (at 2.7V) for the complete transmit path.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; OFDM modulation; active filters; amplifiers; elliptic filters; frequency synthesizers; low-power electronics; microwave receivers; mixers (circuits); transceivers; ultra wideband technology; 0.25 micron; 2.7 V; 3.2 to 4.8 GHz; 43 mA; BiCMOS technology; RF output stage; SiGe; frequency synthesizer; multiband OFDM UWB transceiver; transmit path; upconversion mixer; variable gain amplifier; wideband elliptic baseband filters; Baseband; Dynamic range; Filters; Frequency synthesizers; Germanium silicon alloys; OFDM; Radio frequency; Silicon germanium; Transceivers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005

Print_ISBN

0-7803-9023-7

Type

conf

DOI

10.1109/CICC.2005.1568629

Filename

1568629