Title :
Characterization of He-plasma-assisted GSMBE InGaAsP
Author :
Pinkney, H. ; Thompson, D.A. ; Robinson, B.J. ; Simpson, P.J. ; Myler, U. ; Streater, R.W.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
In this paper, we present the properties of InGaAsP (1.55 μm) grown by He-plasma-assisted GSMBE. Variable energy positron annihilation studies, room temperature hall effect measurements and SIMS analysis have been performed. It is evident that this material contains traps which reduce the carrier concentration in both doped and undoped samples, open volume defects which enlarge upon anneal, and a small concentration of hydrogen, all of which may play a role in the behavior of this novel material
Keywords :
Hall effect; III-V semiconductors; annealing; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; ion beam assisted deposition; plasma deposited coatings; positron annihilation; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; 1.55 mum; He-plasma-assisted GSMBE InGaAsP; InGaAsP; anneal; carrier concentration; open volume defects; variable energy positron annihilation; Annealing; Doping; Electrons; Plasma materials processing; Plasma properties; Plasma temperature; Positrons; Scattering parameters; Substrates; Temperature measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773655
