DocumentCode :
2907563
Title :
35×2 inch wafer MOVPE system for electronic and optoelectronic devices
Author :
Schmitt, T. ; Deufel, M. ; Strauch, G. ; Schmitz, D. ; Heuken, M. ; Juergensen, H.
Author_Institution :
AIXTRON AG, Aachen, Germany
fYear :
1999
fDate :
1999
Firstpage :
147
Lastpage :
150
Abstract :
Results of the AIX 2600G3 planetary reactor(R) in the 35×2 inch configuration with Gas Foil Rotation(R) will be shown. Measurements including all seven 2 inch wafers of one satellite will be presented. As a further detailed study and tuning of the AIXTRON Planetary Reactor(R) system AIX 2600G3 in the 35 times 2 inch configuration, we investigated the depletion behaviour along the reactor radius using rotating, as well as intentionally fixed satellites. Very often doped DBR-structures are used as a mirror below the active region of the AlGaInP LED to increase the light output. So AlAs/GaAs distributed Bragg reflectors (DBR) were chosen to optimise the thickness homogeneity and gallium efficiency across the five 6 inch satellites in dependence of the total flow. Further on, we examined the influence of the total reactor pressure on the semiconductor layer composition via X-ray data of AlInP. To check the adjustments of our reactor configuration we chose the critical and very temperature sensitive material system AlGaInP, as well as AlGaInP-MQW structures
Keywords :
III-V semiconductors; MOCVD coatings; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; light emitting diodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 2 in; 35 in; 35×2 inch wafer MOVPE system; AlAs/GaAs distributed Bragg reflectors; AlGaInP; AlGaInP LED; Gas Foil Rotation; active region; electronic devices; light output; optoelectronic devices; reactor configuration; reactor radius; total reactor pressure; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Extraterrestrial measurements; Gallium arsenide; III-V semiconductor materials; Inductors; Mirrors; Satellites; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
ISSN :
1092-8669
Print_ISBN :
0-7803-5562-8
Type :
conf
DOI :
10.1109/ICIPRM.1999.773656
Filename :
773656
Link To Document :
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