Title :
Ruthenium doped high power 1.48 μm SIPBH laser
Author :
van Geelen, A. ; Binsma, J.J.M. ; Van Dongen, T. ; van Leerdam, A. ; Dadger, A. ; Bimberg, D. ; Stenzel, O. ; Schumann, H.
Author_Institution :
Uniphase Netherlands B.V., Eindhoven, Netherlands
Abstract :
SIPBH 1.48 μm pumping laser diodes with ruthenium doped InP semi-insulating layers are demonstrated for the first time. Structures with an InP:Ru layer, an InP:Ru and additional n-InP hole block, and a reference structure with InP:Fe and n-InP are compared. The use of an n-InP hole blocking layer is necessary to obtain high output power. Light output power of 190 mW is obtained for a SIPBH with InP:Ru in comparison to 207 mW for the InP:Fe reference structure at 700 mA. With an improved active layer design 275 mW of output power was demonstrated at 1000 mA
Keywords :
III-V semiconductors; indium compounds; ruthenium; semiconductor lasers; 1.48 mum; 1000 mA; 190 mW; 207 mW; 275 mW; 700 mA; InP:Fe; InP:Ru; Ru doped high power SIPBH laser; active layer design; blocking layer; laser diodes; planar buried heterostructure laser; Diode lasers; Erbium-doped fiber amplifier; Indium phosphide; Iron; Laser excitation; Leakage current; Power amplifiers; Power generation; Power lasers; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773669
