• DocumentCode
    2907774
  • Title

    A novel GaInAsP microcylinder laser with AlInAs(Ox) claddings

  • Author

    Fujita, M. ; Baba, T. ; Matsutani, A. ; Koyama, F. ; Iga, K.

  • Author_Institution
    Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    215
  • Lastpage
    217
  • Abstract
    We have proposed and demonstrated a novel 1.5-μm-GaInAsP microcylinder laser with low refractive index InAlAs(Ox) claddings, which allows the strong optical confinement as in a microdisk. The effective threshold current density was 25% lower than that for the previous 0.98-μm-GaInAs device. The selective oxidation of the claddings is expected to further reduce the threshold and extend the feasibility of this type of device in large scale photonic circuits
  • Keywords
    aluminium compounds; claddings; current density; gallium arsenide; gallium compounds; indium compounds; microcavity lasers; oxidation; refractive index; semiconductor lasers; 1.5 mum; AlInAs; AlInAs(Ox) claddings; GaInAsP; GaInAsP microcylinder laser; effective threshold current density; large scale photonic circuits; low refractive index; selective oxidation; strong optical confinement; Electrons; Laser modes; Leakage current; Optical refraction; Optical scattering; Optical variables control; Optical waveguides; Oxidation; Temperature; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
  • Conference_Location
    Davos
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-5562-8
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1999.773673
  • Filename
    773673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2907774