Title :
A novel GaInAsP microcylinder laser with AlInAs(Ox) claddings
Author :
Fujita, M. ; Baba, T. ; Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Div. of Electr. & Comput. Eng., Yokohama Nat. Univ., Japan
Abstract :
We have proposed and demonstrated a novel 1.5-μm-GaInAsP microcylinder laser with low refractive index InAlAs(Ox) claddings, which allows the strong optical confinement as in a microdisk. The effective threshold current density was 25% lower than that for the previous 0.98-μm-GaInAs device. The selective oxidation of the claddings is expected to further reduce the threshold and extend the feasibility of this type of device in large scale photonic circuits
Keywords :
aluminium compounds; claddings; current density; gallium arsenide; gallium compounds; indium compounds; microcavity lasers; oxidation; refractive index; semiconductor lasers; 1.5 mum; AlInAs; AlInAs(Ox) claddings; GaInAsP; GaInAsP microcylinder laser; effective threshold current density; large scale photonic circuits; low refractive index; selective oxidation; strong optical confinement; Electrons; Laser modes; Leakage current; Optical refraction; Optical scattering; Optical variables control; Optical waveguides; Oxidation; Temperature; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773673
