DocumentCode :
29078
Title :
High-Speed BPSK Modulation in Silicon
Author :
Qi Li ; Ran Ding ; Yang Liu ; Baehr-Jones, Tom ; Hochberg, Michael ; Bergman, Keren
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume :
27
Issue :
12
fYear :
2015
fDate :
June15, 15 2015
Firstpage :
1329
Lastpage :
1332
Abstract :
Binary phase-shift keying (BPSK) modulator is the basic component for generating advanced modulation formats such as polarization-division-multiplexed quadrature phase-shift keying. In this letter, we demonstrate BPSK modulation using a silicon traveling-wave modulator at data rate up to 48 Gb/s, with 7.4-Vpp differential RF driving voltage and record 8.75-pJ/b dynamic energy efficiency. The performance of the silicon BPSK modulator is compared with a commercial lithium niobate phase modulator, showing better dispersion tolerance.
Keywords :
elemental semiconductors; optical communication equipment; optical dispersion; optical modulation; phase shift keying; silicon; Si; binary phase-shift keying modulator; data rate; differential RF driving voltage; dispersion tolerance; dynamic energy efficiency; high-speed BPSK modulation; silicon BPSK modulator; silicon traveling-wave modulator; Binary phase shift keying; Bit error rate; Chirp; Lithium niobate; Silicon; Integrated optoelectronics; Phase modulation; Silicon-on-insulator technology; integrated optoelectronics; silicon-on-insulator technology;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2015.2421328
Filename :
7086327
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=29078
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