High-Speed BPSK Modulation in Silicon

Author

Qi Li ; Ran Ding ; Yang Liu ; Baehr-Jones, Tom ; Hochberg, Michael ; Bergman, Keren

Author_Institution

Dept. of Electr. Eng., Columbia Univ., New York, NY, USA

Volume

27

Issue

12

fYear

2015

fDate

June15, 15 2015

Firstpage

1329

Lastpage

1332

Abstract

Binary phase-shift keying (BPSK) modulator is the basic component for generating advanced modulation formats such as polarization-division-multiplexed quadrature phase-shift keying. In this letter, we demonstrate BPSK modulation using a silicon traveling-wave modulator at data rate up to 48 Gb/s, with 7.4-V_pp differential RF driving voltage and record 8.75-pJ/b dynamic energy efficiency. The performance of the silicon BPSK modulator is compared with a commercial lithium niobate phase modulator, showing better dispersion tolerance.

Keywords

elemental semiconductors; optical communication equipment; optical dispersion; optical modulation; phase shift keying; silicon; Si; binary phase-shift keying modulator; data rate; differential RF driving voltage; dispersion tolerance; dynamic energy efficiency; high-speed BPSK modulation; silicon BPSK modulator; silicon traveling-wave modulator; Binary phase shift keying; Bit error rate; Chirp; Lithium niobate; Silicon; Integrated optoelectronics; Phase modulation; Silicon-on-insulator technology; integrated optoelectronics; silicon-on-insulator technology;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2015.2421328

Filename

7086327