DocumentCode :
2907819
Title :
A high current driving charge pump with current regulation method
Author :
Shin, Soon-Kyun ; Kong, Bai-Sun ; Lee, Chil-Gee ; Jun, Young-Hyun ; Kim, Jae-Whui
Author_Institution :
Semicond. Bus., Samsung Electron. Co., South Korea
fYear :
2005
fDate :
18-21 Sept. 2005
Firstpage :
207
Lastpage :
210
Abstract :
This paper proposes a charge pump having a high driving capability for driving more than a load of 8 mA with a 5 V regulated output voltage. The output of the charge pump generates 5 V without any damages to the oxide using protection circuits, even though it uses 3 V MOS transistors. The prototype chip designed using 0.13 μm CMOS process provides the range of a 0∼25 mA load current and generates a well regulated 5 V output voltage with a flying capacitor of 500 nF and clock frequency of 500 KHz. The chip area is 0.21 mm2. The power efficiency is as much as 86% at 3.0 V supply.
Keywords :
CMOS integrated circuits; driver circuits; 0.13 micron; 3 V; 5 V; 500 kHz; 500 nF; CMOS process; MOS transistors; charge pump; current regulation method; flying capacitor; protection circuits; CMOS process; Charge pumps; Circuits; Clocks; Current control; MOS capacitors; MOSFETs; Protection; Prototypes; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Print_ISBN :
0-7803-9023-7
Type :
conf
DOI :
10.1109/CICC.2005.1568644
Filename :
1568644
Link To Document :
بازگشت