Title :
Thermal behavior of atomic hydrogen passivated acceptors in p-InP
Author :
Rao, E.V.K. ; Theys, B. ; Gottesman, Y. ; Bissessnr, H.
Author_Institution :
CNET/DTD/CDP, France Telecom, Bagneux, France
Abstract :
The Zn and Be doped (1 to 2×1018 cm-3) p-InP samples are first hydrogenated by exposing to a deuterium (D) plasma to passivate (or neutralize) acceptors through dopant-H interactions. Later on, subsequent to 10 min isochronal anneals up to 450°C, the reactivation of holes is monitored to determine activation energies, ~0.7 eV for Zn and 1.08 eV for Be. These values clearly imply a good thermal stability of acceptor passivation and open a way for the implementation of hydrogenation in the photon device technology
Keywords :
Hall effect; III-V semiconductors; beryllium; hydrogen; hydrogenation; impurity states; indium compounds; passivation; thermal stability; zinc; InP:H,Be; InP:H,Zn; dopant-H interactions; hole reactivation; hydrogen passivated acceptors; hydrogenation; isochronal annealing; photon device technology; plasma exposure; thermal stability; Annealing; Deuterium; Hydrogen; Impurities; Indium gallium arsenide; Indium phosphide; Passivation; Photonics; Thermal stability; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773680
