DocumentCode :
2907910
Title :
Modeling of Zn diffusion in InP/InGaAs materials during MOVPE growth
Author :
Tai, Cheng-Yu ; Seiler, J. ; Geva, M.
Author_Institution :
Microelectron./Optoelectron. Center, AT&T Bell Labs., Breinigsville, PA, USA
fYear :
1999
fDate :
1999
Firstpage :
245
Lastpage :
248
Abstract :
Simple MOCVD grown InP/InGaAs heterostructures were used in this Zn diffusion study. After each epitaxial step, Zn profiles were measured by SIMS. PROPHET, a process simulation tool, was used to model these experimental results and extract the Zn diffusivities in InP and InGaAs materials. We conclude that Zn diffusion can be explained by the previously reported kick-out mechanism. During the InGaAs epitaxial growth, Zn diffusion is enhanced when the Zn doping level is about 1×1019cm-3, while no enhanced Zn diffusion occurs when the Zn doping level is 1×1018 cm-3 or less. We propose that a possible explanation for the enhancement of Zn diffusion during the high Zn-doped InGaAs/InP growth is the creation of the point defects during the growth
Keywords :
III-V semiconductors; MOCVD; diffusion; doping profiles; gallium arsenide; indium compounds; point defects; secondary ion mass spectra; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; zinc; InGaAs-InP:Zn; MOCVD; MOVPE; SIMS; Zn profiles; diffusion; epitaxial growth; heterostructures; point defects; process simulation; Doping; Epitaxial growth; Epitaxial layers; III-V semiconductor materials; Indium gallium arsenide; Indium phosphide; MOCVD; Optical materials; Semiconductor process modeling; Zinc;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
ISSN :
1092-8669
Print_ISBN :
0-7803-5562-8
Type :
conf
DOI :
10.1109/ICIPRM.1999.773681
Filename :
773681
Link To Document :
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